Engineering Interfacial Structure in “Giant” PbS/CdS Quantum Dots for Photoelectrochemical Solar Energy Conversion
Number of Authors: 13
2016 (English)In: Nano Energy, ISSN 2211-2855, Vol. 30, 531-541 p.Article in journal (Refereed) Published
The interfacial structure in “giant” PbS/CdS quantum dots (QDs) was engineered by modulating the Cd:S molar ratio during in situ growth. The control of the gradient interfacial layer could facilitate hole transfer, regulate the transition from double- to single-color emission, as a consequence. These QDs are optically active close-to-the near-infrared (NIR) spectral region and are candidates as absorber materials in solar energy conversion. Photoinduced charge transfer from “giant” QDs to electron scavenger can still take place despite the ultra-thick (~5 nm) shell. The hybrid architecture based on a TiO2 mesoporous framework sensitized by the “giant” QDs with alloyed interface can produce a saturated photocurrent density as high as ~5.3 mA/cm2 in a photoelectrochemical (PEC) cell under 1 Sun illumination, which is around 2 times higher than that of bare PbS and core/thin-shell PbS/CdS QDs sensitizer. The as-prepared PEC device presented very good stability thanks to the “giant” core/shell QDs architecture with tailored interfacial layer and a further coating of the ZnS shell. 78% of the initial current density is kept after 2-hour irradiation at 1 Sun. Engineering of electronic band structure plays a key role in boosting the functional properties of these composite systems, which hold great potential for H2 production in PEC devices.
Place, publisher, year, edition, pages
2016. Vol. 30, 531-541 p.
Other Physics Topics
Research subject Experimental physics
IdentifiersURN: urn:nbn:se:ltu:diva-60015DOI: 10.1016/j.nanoen.2016.10.029ScopusID: 2-s2.0-84993965356OAI: oai:DiVA.org:ltu-60015DiVA: diva2:1040706
Validerad; 2016; Nivå 2; 2016-11-20 (andbra)2016-10-282016-10-282016-11-20Bibliographically approved