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Engineering Interfacial Structure in “Giant” PbS/CdS Quantum Dots for Photoelectrochemical Solar Energy Conversion
Institut National de la Recherche Scientifique, 1650 Boulevard Lionel-Boulet, Varennes, Québec .
Dipartimento di Fisica, Politecnico di Milano.
Institut National de la Recherche Scientifique, 1650 Boulevard Lionel-Boulet, Varennes, Québec .
Dipartimento di Fisica, Politecnico di Milano.
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Number of Authors: 132016 (English)In: Nano Energy, ISSN 2211-2855, Vol. 30, p. 531-541Article in journal (Refereed) Published
Abstract [en]

The interfacial structure in “giant” PbS/CdS quantum dots (QDs) was engineered by modulating the Cd:S molar ratio during in situ growth. The control of the gradient interfacial layer could facilitate hole transfer, regulate the transition from double- to single-color emission, as a consequence. These QDs are optically active close-to-the near-infrared (NIR) spectral region and are candidates as absorber materials in solar energy conversion. Photoinduced charge transfer from “giant” QDs to electron scavenger can still take place despite the ultra-thick (~5 nm) shell. The hybrid architecture based on a TiO2 mesoporous framework sensitized by the “giant” QDs with alloyed interface can produce a saturated photocurrent density as high as ~5.3 mA/cm2 in a photoelectrochemical (PEC) cell under 1 Sun illumination, which is around 2 times higher than that of bare PbS and core/thin-shell PbS/CdS QDs sensitizer. The as-prepared PEC device presented very good stability thanks to the “giant” core/shell QDs architecture with tailored interfacial layer and a further coating of the ZnS shell. 78% of the initial current density is kept after 2-hour irradiation at 1 Sun. Engineering of electronic band structure plays a key role in boosting the functional properties of these composite systems, which hold great potential for H2 production in PEC devices.

Place, publisher, year, edition, pages
2016. Vol. 30, p. 531-541
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Other Physics Topics
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Experimental physics
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URN: urn:nbn:se:ltu:diva-60015DOI: 10.1016/j.nanoen.2016.10.029ISI: 000390636100064Scopus ID: 2-s2.0-84993965356OAI: oai:DiVA.org:ltu-60015DiVA, id: diva2:1040706
Note

Validerad; 2016; Nivå 2; 2016-11-20 (andbra)

Available from: 2016-10-28 Created: 2016-10-28 Last updated: 2018-07-10Bibliographically approved

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Vomiero, Alberto

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