Ultrasmall Nanoplatelets: The Ultimate Tuning of Optoelectronic PropertiesINRS, Quebec University, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X1S2 Canada; Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu, 610054 P. R. China.
INRS, Quebec University, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X1S2 Canada.
INRS, Quebec University, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X1S2 Canada.
INRS, Quebec University, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X1S2 Canada; School of Chemistry and Material Science, Guizhou Normal University, 550001 Guiyang, China.
INRS, Quebec University, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X1S2 Canada.
INRS, Quebec University, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X1S2 Canada.
INRS, Quebec University, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X1S2 Canada.
INRS, Quebec University, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X1S2 Canada.
Dipartimento di Energia, Politecnico di Milano, via Ponzio 34/3 and IFN-CNR, P.za L. Da Vinci 32, 20133 Milano, Italy.
Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu, 610054 P. R. China.
INRS, Quebec University, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X1S2 Canada.
INRS, Quebec University, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X1S2 Canada; Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu, 610054 P. R. China.
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2017 (English)In: Advanced Energy Materials, ISSN 1614-6832, E-ISSN 1614-6840, Vol. 7, no 17, article id 1602728Article in journal (Refereed) Published
Abstract [en]
2D semiconducting nanoplatelets (NPLs) are an emerging class of photoactive materials. They can be used as building blocks in optoelectronic devices thanks to their large absorption coefficient, high carrier mobility, and unique thickness-dependent optical transitions. The main drawback of NPLs is their large lateral size, which results in unfavorable band energy levels and low quantum yield (QY). Here, ultrasmall lead chalcogenide PbSe1- xSx NPLs are prepared, which exhibit an unprecedented QY of ≈60%, the highest ever reported for this structure. The NPLs are applied as light absorber in a photoelectrochemical system, leading to a saturated photocurrent density of ≈5.0 mA cm-2 (44 mL cm-2 d-1), which is a record for NPL-based photoelectrodes in solar-driven hydrogen generation. Ultrasmall NPLs hold the potential for breakthrough developments in the field of optically active nanomaterials.
Place, publisher, year, edition, pages
John Wiley & Sons, 2017. Vol. 7, no 17, article id 1602728
National Category
Other Physics Topics
Research subject
Experimental Physics
Identifiers
URN: urn:nbn:se:ltu:diva-63547DOI: 10.1002/aenm.201602728ISI: 000409410000006Scopus ID: 2-s2.0-85019065410OAI: oai:DiVA.org:ltu-63547DiVA, id: diva2:1098801
Note
Validerad;2017;Nivå 2;2017-09-12 (andbra)
2017-05-262017-05-262024-04-05Bibliographically approved