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Theory of a carbon-oxygen-hydrogen recombination center in n-type Si
Department of Physics and I3N, University of Aveiro, Campus Santiago.
Department of Physics and I3N, University of Aveiro, Campus Santiago.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Material Science.ORCID iD: 0000-0002-0292-1159
Department of Physics and I3N, University of Aveiro, Campus Santiago.
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2017 (English)In: Physica status solidi. A, Applied research, ISSN 0031-8965, E-ISSN 1521-396X, Vol. 214, no 7, 1700309Article in journal (Refereed) Published
Abstract [en]

We have recently found that in-diffusion of hydrogen into n-type Si crystals containing oxygen and carbon impurities can result in the formation of powerful recombination centers (M. Vaqueiro-Contreras et al., to appear in PSS RRL). Here, we describe a combination of first-principles calculations and electrical measurements to investigate the composition, structure, electrical activity and recombination mechanism of a carbon-oxygen-hydrogen complex (COH) in Si. We found a defect comprising a carbon-oxygen complex connected to an H atom whose location depends on the charge state of the complex, and showing a calculated acceptor level at Ev+0.3eV, a few meV away from the observations. Bistable carbon-oxygen-hydrogen complex in silicon. Carbon, oxygen, hydrogen, and silicon atoms are shown in gray, red, black, and white, respectively

Place, publisher, year, edition, pages
John Wiley & Sons, 2017. Vol. 214, no 7, 1700309
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Other Physics Topics
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Applied Physics
Identifiers
URN: urn:nbn:se:ltu:diva-64823DOI: 10.1002/pssa.201700309OAI: oai:DiVA.org:ltu-64823DiVA: diva2:1120736
Conference
17th International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST), Lopota, Georgia, Oct 01-06, 2017
Note

2017-08-16 (andbra);Konferensartikel i tidskrift

Available from: 2017-07-07 Created: 2017-07-07 Last updated: 2017-11-29Bibliographically approved

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Öberg, Sven

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