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A 352nW, 30 ppm/°C all MOS nano ampere current reference circuit
Luleå University of Technology, Department of Computer Science, Electrical and Space Engineering, Embedded Internet Systems Lab.
Department of Micro and Nano Sciences, School of Electrical Engineering, Aalto University.
2017 (English)In: Microelectronics Journal, ISSN 0959-8324, Vol. 69, 45-52 p.Article in journal (Refereed) Published
Abstract [en]

In this work, an ultra low power all-MOSFET based current reference circuit, developed in 0.18 µm CMOS technology, is presented. The proposed circuit is based on the classical resistor-less beta multiplier circuit with an additional temperature compensation feature. The circuit is capable of providing the reference current in a nanoampere range for the supply voltage ranging from 1 V to 2 V in the industrial temperature range of −40 °C to 85 °C. The measurements were performed on 10 prototypes. The measured mean value of the reference current is 58.7 nA with a mean temperature coefficient value of 30 ppm/°C. In addition, the measured mean line regulation is 3.4%/V in the given supply voltage range. The total current consumption of the circuit is 352 nA and the chip area is 0.036 mm2.

Place, publisher, year, edition, pages
Elsevier, 2017. Vol. 69, 45-52 p.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Industrial Electronics
Identifiers
URN: urn:nbn:se:ltu:diva-66073DOI: 10.1016/j.mejo.2017.09.006ISI: 000415677600005Scopus ID: 2-s2.0-85030703856OAI: oai:DiVA.org:ltu-66073DiVA: diva2:1148581
Note

Validerad;2017;Nivå 1;2017-10-11 (andbra)

Available from: 2017-10-11 Created: 2017-10-11 Last updated: 2017-12-01Bibliographically approved

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