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Elastic constants of the II–IV nitride semiconductors MgSiN2, MgGeN2 and MgSnN2
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Material Science. Department of Materials, Imperial College London.ORCID iD: 0000-0002-9076-5087
Department of Physics, Cavendish Laboratory, University of Cambridge.
2018 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 51, article id 375101Article in journal (Refereed) Published
Abstract [en]

The single crystal elastic constants, polycrystalline elastic moduli and related properties of orthorhombic MgSiN2, MgGeN2 and MgSnN2 have been calculated using density functional theory and compared to the related wurtzite structured AlN, GaN and InN. Since there are no experimental studies of single crystal elastic properties of neither MgSiN2, MgGeN2 or MgSnN2, we have established the accuracy of the calculations by comparison with experimental data for AlN, GaN and InN. The calculated polycrystalline elastic moduli of MgSiN2 are found to be in good agreement with available experimental elastic moduli. It will be shown that MgSiN2 and MgGeN2 have a small xy-plane lattice mismatch with AlN and GaN, respectively, while at the same time being significantly softer than both AlN and GaN. This shows that MgSiN2 and MgGeN2 should be possible to be grown on AlN and GaN without significant lattice mismatch or strain.

Place, publisher, year, edition, pages
Institute of Physics (IOP), 2018. Vol. 51, article id 375101
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Other Physics Topics
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Applied Physics
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URN: urn:nbn:se:ltu:diva-70320DOI: 10.1088/1361-6463/aad41fOAI: oai:DiVA.org:ltu-70320DiVA, id: diva2:1237823
Note

Validerad;2018;Nivå 2;2018-08-06 (andbra)

Available from: 2018-08-10 Created: 2018-08-10 Last updated: 2018-08-10Bibliographically approved

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