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Rigorous dc Solution of Partial Element Equivalent Circuit Models Including Conductive, Dielectric, and Magnetic Materials
UAq EMC Laboratory, Department of Industrial and Information Engineering and Economics, University of L’Aquila, L’Aquila, Italy .
Advanced Power Semiconductor Laboratory, ETH Zurich, Zurich, Switzerland.
Unit of Electrical Engineering, University Campus Bio-Medico of Rome, Rome, Italy.
Advanced Power Semiconductor Laboratory, ETH Zurich, Zurich, Switzerland.
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2020 (English)In: IEEE transactions on electromagnetic compatibility (Print), ISSN 0018-9375, E-ISSN 1558-187X, Vol. 62, no 3, p. 870-879Article in journal (Refereed) Published
Abstract [en]

This paper presents a rigorous derivation of the dc solution of three-dimensional partial element equivalent circuit (PEEC) formulation extended to include simultaneously conductive, dielectric, and magnetic materials. The circuit interpretation of Maxwell’s equations provided by the PEEC method allows to reformulate the dc modeling task in such a way that physical phenomena are fully exploited. Indeed, since the displacements currents are identically zero in dielectrics, Kirchhoff’s current law is enforced in terms of charge conservation internally to dielectrics or at the interface between dielectrics and other materials. A well-posed problem is achieved by adding the charges as new unknowns and identifying the disconnected objects. Two numerical examples are presented demonstrating the accuracy of the proposed method when compared to the dc solution as extracted by the fast Fourier transform of the impulse response and a finite element method simulation.

Place, publisher, year, edition, pages
IEEE, 2020. Vol. 62, no 3, p. 870-879
Keywords [en]
dc solution, partial element equivalent circuit (PEEC) method
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electronic systems
Identifiers
URN: urn:nbn:se:ltu:diva-75290DOI: 10.1109/TEMC.2019.2919759ISI: 000544278500024Scopus ID: 2-s2.0-85068547726OAI: oai:DiVA.org:ltu-75290DiVA, id: diva2:1337094
Note

Validerad;2020;Nivå 2;2020-08-17 (johcin)

Available from: 2019-07-11 Created: 2019-07-11 Last updated: 2020-08-17Bibliographically approved

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Ekman, Jonas

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