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A 40 nW CMOS-Based Temperature Sensor with Calibration Free Inaccuracy within ±0.6 ◦C
Luleå University of Technology, Department of Computer Science, Electrical and Space Engineering, Embedded Internet Systems Lab.ORCID iD: 0000-0002-6055-3198
Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland.
2019 (English)In: Electronics, E-ISSN 2079-9292, Vol. 8, no 11, article id 1275Article in journal (Refereed) Published
Abstract [en]

In this study, a temperature equivalent voltage signal was obtained by subtracting output voltages received from two individual temperature sensors. These sensors work in the subthreshold region and generate the output voltage signals that are proportional and complementary to the temperature. Over the temperature range of −40 ∘" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">∘C to +85 ∘" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">∘C without using any calibration method, absolute temperature inaccuracy less than ±0.6 ∘" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">∘C was attained from the measurement of five prototypes of the proposed temperature sensor. The implementation was done in a standard 0.18 μ" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">μ m CMOS technology with a total area of 0.0018 mm 2" role="presentation" style="box-sizing: border-box; max-height: none; display: inline; line-height: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; min-width: 0px; min-height: 0px; border: 0px; padding: 0px; margin: 0px; position: relative;">2. The total power consumption is 40 nW for a supply voltage of 1.2 V measured at room temperature.

Place, publisher, year, edition, pages
MDPI, 2019. Vol. 8, no 11, article id 1275
Keywords [en]
PTAT, CTAT, temperature sensor, CMOS, ultra low power, calibration free
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electronic systems
Identifiers
URN: urn:nbn:se:ltu:diva-76593DOI: 10.3390/electronics8111275ISI: 000502269500071Scopus ID: 2-s2.0-85074401504OAI: oai:DiVA.org:ltu-76593DiVA, id: diva2:1367439
Note

Validerad;2019;Nivå 2;2019-11-04 (svasva)

Available from: 2019-11-04 Created: 2019-11-04 Last updated: 2021-10-15Bibliographically approved

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Chouhan, Shailesh Singh

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