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Peel-and-Stick Integration of Atomically Thin Nonlayered PtS Semiconductors for Multidimensionally Stretchable Electronic Devices
NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States; Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea.
NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States.
NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States; Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32826, United States.
Department of Mechanical and Aerospace Engineering, University of Central Florida, Orlando, Florida 32826, United States.
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2022 (English)In: ACS Applied Materials and Interfaces, ISSN 1944-8244, E-ISSN 1944-8252, Vol. 14, no 17, p. 20268-20279Article in journal (Refereed) Published
Abstract [en]

Various near-atom-thickness two-dimensional (2D) van der Waals (vdW) crystals with unparalleled electromechanical properties have been explored for transformative devices. Currently, the availability of 2D vdW crystals is rather limited in nature as they are only obtained from certain mother crystals with intrinsically possessed layered crystallinity and anisotropic molecular bonding. Recent efforts to transform conventionally non-vdW three-dimensional (3D) crystals into ultrathin 2D-like structures have seen rapid developments to explore device building blocks of unique form factors. Herein, we explore a “peel-and-stick” approach, where a nonlayered 3D platinum sulfide (PtS) crystal, traditionally known as a cooperate mineral material, is transformed into a freestanding 2D-like membrane for electromechanical applications. The ultrathin (∼10 nm) 3D PtS films grown on large-area (>cm2) silicon dioxide/silicon (SiO2/Si) wafers are precisely “peeled” inside water retaining desired geometries via a capillary-force-driven surface wettability control. Subsequently, they are “sticked” on strain-engineered patterned substrates presenting prominent semiconducting properties, i.e., p-type transport with an optical band gap of ∼1.24 eV. A variety of mechanically deformable strain-invariant electronic devices have been demonstrated by this peel-and-stick method, including biaxially stretchable photodetectors and respiratory sensing face masks. This study offers new opportunities of 2D-like nonlayered semiconducting crystals for emerging mechanically reconfigurable and stretchable device technologies.

Place, publisher, year, edition, pages
American Chemical Society (ACS), 2022. Vol. 14, no 17, p. 20268-20279
Keywords [en]
platinum sulfide, PtS, stretchable device, photodetector, non-vdW crystal
National Category
Condensed Matter Physics Other Physics Topics
Research subject
Applied Physics
Identifiers
URN: urn:nbn:se:ltu:diva-90424DOI: 10.1021/acsami.2c02766ISI: 000813045200001PubMedID: 35442029Scopus ID: 2-s2.0-85129465809OAI: oai:DiVA.org:ltu-90424DiVA, id: diva2:1653947
Funder
Swedish Research Council, 2018-05973The Kempe FoundationsKnut and Alice Wallenberg FoundationCarl Tryggers foundation , CTS 20:71
Note

Validerad;2022;Nivå 2;2022-06-01 (johcin);

Funder: National Science Foundation (CMMI-1728390); University of Central Florida; Korea Institute of Energy Technology Evaluation and Planning (KETEP) (20173010013340); MOTIE, Korea, Technology Innovation Program (20010542); National Research Foundation of Korea (NRF), Korea government (MSIT)(2019R1F1A1058410); US NSF (ECCS-1809112)

Available from: 2022-04-25 Created: 2022-04-25 Last updated: 2023-09-05Bibliographically approved

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Sattar, ShahidLarsson, Andreas

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