Silicon carbide is a captivating semiconductor material for electrical and electro-optical applications requiring high temperatures. Silicon carbide is a crucial non-oxide ceramic with a wide range of uses in manufacturing. It has special properties like high rigidity and durability, heat and chemical constancy, a high melting point, oxidation resistance, powerful erosion resistance, etc. Due to all of these properties, silicon carbide is the perfect material for high-power, high-temperature electrical devices as well as erosion and cutting purposes. Silicon carbide materials are frequently used in different fields of nuclear materials and semiconductor materials because of their outstanding radiation resistance, thermal conductivity, oxidation resistance, and mechanical strength. This study presents various K-Banhatti entropies, redefines Zagreb entropies, and the atom-bond sum connectivity entropy of the double and strong double graphs of silicon carbide [Si2C3−I(r,s)], and presents a numerical and graphical analysis of these results. The QSPR analysis of silicon carbide is performed for four characteristics Poisson’s ratio, shear modulus, Young’s modulus and bulk modulus through linear and quadratic regression analysis and found the best prediction. These models provide scientists with a new way of estimating physicochemical properties.