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The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si
Department of Physics, University of Aveiro.
School of Physics, University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
School of Natural Science, University of Newcastle upon Tyne.
2003 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 340, p. 523-527Article in journal (Refereed) Published
Abstract [en]

Density functional calculations are carried out on divacancy-oxygen (V2O and V2O2) complexes in silicon, paying particular attention to their formation and dissociation mechanisms as well as their electrical activity. The formation of V2O around 220°C is controlled by the diffusion of V2 to immobile oxygen traps, while it dissociates around 300°C into VO and V. V2O and V2O2 are found to possess deep single and double acceptor levels as well as deep donor levels similar to those of V2.

Place, publisher, year, edition, pages
2003. Vol. 340, p. 523-527
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-2413DOI: 10.1016/j.physb.2003.09.143ISI: 000188300200106Scopus ID: 2-s2.0-0347134677Local ID: 008b1840-bda9-11db-9be7-000ea68e967bOAI: oai:DiVA.org:ltu-2413DiVA, id: diva2:975265
Note
Validerad; 2003; 20070216 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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