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Composition and resistivity changes of reactively sputtered W-Si-N thin films under vacuum annealing
Dipartimento di Fisica, Università di Padova.ORCID iD: 0000-0003-2935-1165
Dipartimento di Fisica Sperimentale, Università di Torino.
Dipartimento di Fisica Sperimentale, Università di Torino.
INFN-LNL.
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 3, p. 1-3, article id 31917Article in journal (Refereed) Published
Abstract [en]

W-Si-N layers about 200 nm thick with different nitrogen content were reactively sputtered from a W5 Si3 target on oxidized silicon substrates. The thermal stability of the films' composition and resistivity was studied with ion beam analysis and four-point probe measurements. Upon vacuum annealing from 600 to 980 °C for 1.5 h, a sample with an initial 56 at. % of nitrogen gradually loses nitrogen down to 36%. This composition lies close to the W- Si3 N4 tie line. Concurrently, the room temperature resistivity decreases from 4.7 to about 2 mΩ cm. The composition changes only a little for a sample whose initial composition is near the W- Si3 N4 tie line and the resistivity changes significantly less than for the nitrogen-rich film. Interpretations are discussed. © 2006 American Institute of Physics.

Place, publisher, year, edition, pages
2006. Vol. 88, no 3, p. 1-3, article id 31917
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Experimental Physics
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URN: urn:nbn:se:ltu:diva-2444DOI: 10.1063/1.2166691ISI: 000234757100028Scopus ID: 2-s2.0-31144443793Local ID: 011f025e-a7d4-47a2-8b93-2d15380a2c7fOAI: oai:DiVA.org:ltu-2444DiVA, id: diva2:975296
Note

Upprättat; 2006; 20141216 (albvom)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2022-10-25Bibliographically approved

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Vomiero, Alberto

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