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Sequential physical vapor deposition and chemical vapor deposition for the growth of In2O3-SnO2 radial and longitudinal heterojunctions
Consiglio Nazionale delle Ricerche, CNR.ORCID iD: 0000-0003-2935-1165
Consiglio Nazionale delle Ricerche, Pisa.
Consiglio Nazionale delle Ricerche, Pisa.
Universität zu Köln.
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Number of Authors: 72014 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 323, no 30, p. 59-64Article in journal (Refereed) Published
Abstract [en]

Heterostructures of In2O3 and SnO2 were produced by sequential application of the physical- and chemical-vapor deposition techniques usually adopted for nanowire fabrication. In2O3 nanowires exhibit a single crystal body-centered cubic structure oriented along the [1 0 0] direction and grow epitaxially on α-sapphire substrate by means of a transport and condensation method assisted by Au nanoparticles. Nucleation and growth occurred via direct vapor solid (VS) mechanism competing with catalyst-mediated vapor-liquid-solid (VLS). SnO2 nanowires were obtained in a single crystal tetragonal (cassiterite) structure and oriented along the [1 0 1] direction, the growth being promoted by the gold particle at the apex of the In2O3 nanowires. The size of the catalyst thereby determines the main morphological features of SnO2 wires. CVD deposition allows precise control of the geometrical features of the heterojunction, also limiting detrimental nucleation of SnO2 on the lateral sides of In2O3 nanowires due to lower longitudinal growth rate. These results can help in improving the ability of finely tuning the morphological and structural properties of heterostructured oxide nanocrystals. © 2014 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2014. Vol. 323, no 30, p. 59-64
Keywords [en]
Chemical vapor deposition, Heterojunctions, Indium oxide and tin oxide nanowires, Physical vapor deposition
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Other Physics Topics
Research subject
Applied Physics
Identifiers
URN: urn:nbn:se:ltu:diva-2630DOI: 10.1016/j.apsusc.2014.07.177Scopus ID: 2-s2.0-84919423412Local ID: 04529d8a-97dc-43bb-999c-040d970f01f2OAI: oai:DiVA.org:ltu-2630DiVA, id: diva2:975483
Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2019-08-20Bibliographically approved

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Vomiero, Alberto

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