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Weakly bound carbon-hydrogen complex in silicon
Institute of Physics and Astronomy, Aarhus University, Aarhus, Denmark.
Institute of Physics and Astronomy, Aarhus University, Aarhus, Denmark.
Institute of Physics and Astronomy, Aarhus University, Aarhus, Denmark.
Department of Physics, University of Exeter, Exeter, United Kingdom.
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2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 61, no 24, p. 16659-16666Article in journal (Refereed) Published
Abstract [en]

Local vibrational modes of a weakly bound carbon-hydrogen complex in silicon have been identified with infrared-absorption spectroscopy. After implantation of protons at ∼20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm-1, and one hydrogen mode at 1885 cm-1 are observed. The three modes originate from the same complex, which is identified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure and local modes of carbon-hydrogen complexes with hydrogen located at the first, second, and third nearest bond-center site to substitutional carbon. The results support our assignment.

Place, publisher, year, edition, pages
2000. Vol. 61, no 24, p. 16659-16666
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-2640DOI: 10.1103/PhysRevB.61.16659ISI: 000088008400052Scopus ID: 2-s2.0-0000013841Local ID: 048fb2c0-1384-11dd-b7d2-000ea68e967bOAI: oai:DiVA.org:ltu-2640DiVA, id: diva2:975493
Note

Validerad; 2000; 20080426 (ysko)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2022-03-16Bibliographically approved

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Öberg, Sven

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