Weakly bound carbon-hydrogen complex in siliconShow others and affiliations
2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 61, no 24, p. 16659-16666Article in journal (Refereed) Published
Abstract [en]
Local vibrational modes of a weakly bound carbon-hydrogen complex in silicon have been identified with infrared-absorption spectroscopy. After implantation of protons at ∼20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm-1, and one hydrogen mode at 1885 cm-1 are observed. The three modes originate from the same complex, which is identified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure and local modes of carbon-hydrogen complexes with hydrogen located at the first, second, and third nearest bond-center site to substitutional carbon. The results support our assignment.
Place, publisher, year, edition, pages
2000. Vol. 61, no 24, p. 16659-16666
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-2640DOI: 10.1103/PhysRevB.61.16659ISI: 000088008400052Scopus ID: 2-s2.0-0000013841Local ID: 048fb2c0-1384-11dd-b7d2-000ea68e967bOAI: oai:DiVA.org:ltu-2640DiVA, id: diva2:975493
Note
Validerad; 2000; 20080426 (ysko)
2016-09-292016-09-292022-03-16Bibliographically approved