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Electron states of a stacking fault ribbon in silicon
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Material Science.ORCID iD: 0000-0002-1655-6658
Institute of Semiconductors, Chinese Academy of Sciences.
1994 (English)In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 92, no 12, p. 987-989Article in journal (Refereed) Published
Abstract [en]

The electronic structure of a bounded intrinsic stacking fault in silicon is calculated. The method used is an LCAO-scheme (Linear Combinations of Atomic Orbitals) taking ten atomic orbitals of s-, p-, and d-type into account. The levels in the band gap are extracted using Lanczos' algorithm and a continued fraction representation of the local density of states. We find occupied states located up to 0.3 eV above the valence band maximum (Eυ). This significantly differs from the result obtained for the ideal infinite fault for which the interface state is located at Eυ+0.1 eV

Place, publisher, year, edition, pages
1994. Vol. 92, no 12, p. 987-989
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Fysik
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URN: urn:nbn:se:ltu:diva-2828DOI: 10.1016/0038-1098(94)90026-4ISI: A1994PV65700011Scopus ID: 2-s2.0-0028729931Local ID: 08a6bc70-bb59-11db-b560-000ea68e967bOAI: oai:DiVA.org:ltu-2828DiVA, id: diva2:975681
Note
Godkänd; 1994; 20070131 (cira)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Lehto, NiklasMarklund, Sune

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