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Theoretical aspects on the formation of the tri-interstitial nitrogen defect in silicon
School of Physics, University of Exeter.
School of Physics, University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
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2008 (English)In: Solid State Phenomena, ISSN 1012-0394, E-ISSN 1662-9779, Vol. 131-133, p. 265-269Article in journal (Refereed) Published
Abstract [en]

In this paper we investigate the formation of interstitial nitrogen trimers N3 which have been suggested as a fast-diffusing species in silicon recently. Out-diffusion profiles of nitro-gen show the involvement of at least two independent nitrogen related defects in the diffusion process depending on the nitrogen concentration at different depths of the sample. When the nitrogen concentration is small it is proposed that nitrogen trimers are formed in a two step process. We present the structural properties of such a defect using density functional theory and examine the energetics of the two proposed reactions leading to the formation of N3.

Place, publisher, year, edition, pages
2008. Vol. 131-133, p. 265-269
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-3461Local ID: 149a68a0-3ba1-11dd-8e42-000ea68e967bOAI: oai:DiVA.org:ltu-3461DiVA, id: diva2:976319
Note
Validerad; 2008; 20080616 (ysko)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2017-11-24Bibliographically approved

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Öberg, Sven

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