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Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon
Institute of Solid State and Semiconductor Physics, Minsk.
Institute of Solid State and Semiconductor Physics, Minsk.
Institute of Solid State and Semiconductor Physics, Minsk.
Institute of Solid State and Semiconductor Physics, Minsk.
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2005 (English)In: Solid State Phenomena, ISSN 1012-0394, E-ISSN 1662-9779, Vol. 108, p. 273-278Article in journal (Refereed) Published
Abstract [en]

The electronic properties and structure of a complex incorporating a self-interstitial (I) and two oxygen atoms are presented by a combination of deep level transient spectroscopy (DLTS), infrared absorption spectroscopy and ab-initio modeling studies. It is argued that the IO2 complex in Si can exist in four charge states (IO2-, IO20, IO2+, and IO2++). The first and the second donor levels of the IO2 complex show an inverted location order in the gap, leading to a E(0/ ++) occupancy level at Ev + 0.255 eV. Activation energies for hole emission, transformation barriers between different structures, and positions of LVM lines for different configurations and charge states have been determined. These observables were calculated by density-functional calculations, which show that they are accounted for if we consider at least two charge-dependent defect structures.

Place, publisher, year, edition, pages
2005. Vol. 108, p. 273-278
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-3600Local ID: 16cdbd70-c325-11db-9ea3-000ea68e967bOAI: oai:DiVA.org:ltu-3600DiVA, id: diva2:976458
Note
Validerad; 2005; 20070223 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2017-11-24Bibliographically approved

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http://www.scientific.net/3-908451-13-2/273/

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Öberg, Sven

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