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Tin-vacancy acceptor levels in electron-irradiated n-type silicon
Institute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark.
Institute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark.
Institute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark.
Institute of Physics and Astronomy, University of Aarhus, Aarhus, Denmark.
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2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 62, no 7, p. 4535-4544Article in journal (Refereed) Published
Abstract [en]

Si crystals (n-type, fz) with doping levels between 1.5×1014 and 2×1016 cm-3 containing in addition ∼1018 Sn/cm3 were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mössbauer spectroscopy, and positron annihilation. Two tin-vacancy (Sn-V) levels at Ec-0.214 eV and Ec-0.501 eV have been identified (Ec denotes the conduction band edge). Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating pseudopotentials to eliminate the core electrons, and applied to large H-terminated clusters. Thus, the Sn-V pair in Si has five different charge states corresponding to four levels in the band gap.

Place, publisher, year, edition, pages
2000. Vol. 62, no 7, p. 4535-4544
National Category
Computational Mathematics
Research subject
Scientific Computing
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URN: urn:nbn:se:ltu:diva-3775DOI: 10.1103/PhysRevB.62.4535ISI: 000088924700052Scopus ID: 2-s2.0-4243678567Local ID: 19b4abd0-1382-11dd-b7d2-000ea68e967bOAI: oai:DiVA.org:ltu-3775DiVA, id: diva2:976636
Note

Validerad; 2000; 20080426 (ysko)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2022-03-16Bibliographically approved

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