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Tin-vacancy acceptor levels in electron-irradiated n-type silicon
University of Aarhus.
University of Aarhus.
University of Aarhus.
University of Aarhus.
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2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 62, no 7, p. 4535-4544Article in journal (Refereed) Published
Abstract [en]

Si crystals (n-type, fz) with doping levels between 1.5×1014 and 2×1016 cm-3 containing in addition ∼1018 Sn/cm3 were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mössbauer spectroscopy, and positron annihilation. Two tin-vacancy (Sn-V) levels at Ec-0.214 eV and Ec-0.501 eV have been identified (Ec denotes the conduction band edge). Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating pseudopotentials to eliminate the core electrons, and applied to large H-terminated clusters. Thus, the Sn-V pair in Si has five different charge states corresponding to four levels in the band gap.

Place, publisher, year, edition, pages
2000. Vol. 62, no 7, p. 4535-4544
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-3775DOI: 10.1103/PhysRevB.62.4535Local ID: 19b4abd0-1382-11dd-b7d2-000ea68e967bOAI: oai:DiVA.org:ltu-3775DiVA, id: diva2:976636
Note
Validerad; 2000; 20080426 (ysko)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2017-11-24Bibliographically approved

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Öberg, Sven

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