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Interaction of vacancies with partial dislocations in silicon
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Material Science.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
1997 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 56, no 20, p. R12706-R12709Article in journal (Refereed) Published
Abstract [en]

The interaction of vacancies with 30° and 90° partial dislocations in silicon is examined. In particular, the structures and binding energies are calculated using hydrogen-terminated clusters and local density-functional theory. Moreover the electronic structure is determined using supercells containing dislocation dipoles. Vacancies are found to have binding energies of approximately 2.0 eV and 0.9 eV to 90° and 30° partials, respectively. The elastic strain field of the partials makes the fourfold vacancy reconstruct, which essentially clears the fundamental gap

Place, publisher, year, edition, pages
1997. Vol. 56, no 20, p. R12706-R12709
National Category
Other Physics Topics Computational Mathematics
Research subject
Fysik; Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-3985DOI: 10.1103/PhysRevB.56.R12706Local ID: 1d6a70c0-bb59-11db-b560-000ea68e967bOAI: oai:DiVA.org:ltu-3985DiVA: diva2:976847
Note

Godkänd; 1997; 20070131 (cira)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2017-11-24Bibliographically approved

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