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E center in silicon has a donor level in the band gap
Institute of Physics and Astronomy, University of Aarhus.
Institut d'Electronique du Solide et des Systèmes, CNRS/ULP, Strasbourg.
Institute of Physics and Astronomy, University of Aarhus.
Institute of Physics and Astronomy, University of Aarhus.
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2006 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 97, no 10, p. 106402/1-106402/4Article in journal (Refereed) Published
Abstract [en]

It has been an accepted fact for more than 40 years that the E center in Si (the group-V impurity-vacancy pair)-one of the most studied defects in semiconductors-has only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction band. We now demonstrate that it has a second level, situated in the lower half of the band gap at 0.27 eV above the valence band. The existence of this level, having a donor character, is disclosed by a combination of different transient-capacitance techniques and electronic-structure calculations. The finding seriously questions some diffusion-modeling approaches performed in the past.

Place, publisher, year, edition, pages
2006. Vol. 97, no 10, p. 106402/1-106402/4
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-4003DOI: 10.1103/PhysRevLett.97.106402ISI: 000240384300041Scopus ID: 2-s2.0-33748550698Local ID: 1db0aad0-c357-11db-9ea3-000ea68e967bOAI: oai:DiVA.org:ltu-4003DiVA, id: diva2:976865
Note

Validerad; 2006; 20070214 (kani)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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