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Optical and electrical properties of vanadium and erbium in 4H-SiC
School of Physics, University of Exeter.
School of Physics, University of Exeter.
School of Physics, University of Exeter.
School of Physics, University of Exeter.
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2004 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 69, no 19, p. 193202-1Article in journal (Refereed) Published
Abstract [en]

Local-density-functional calculations are carried out on vanadium and erbium centers in 4H-SiC. Particular attention is paid to their electrical and optical properties. We find that both V and Er lie at Si sites and can exist in three charge states with deep donor and acceptor levels. While isolated VSi possesses intra-d and ionization induced optical transitions around 0.94 and 2.9 eV respectively, the intense and temperature stable intra-f optical transitions due to Er are unlikely to be due to an isolated Er defect. It is suggested that both impurities can trap H and N forming complexes which may limit the electrical efficiency of V and act as Er related exciton traps.

Place, publisher, year, edition, pages
2004. Vol. 69, no 19, p. 193202-1
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-4147DOI: 10.1103/PhysRevB.69.193202ISI: 000221961700007Scopus ID: 2-s2.0-45849155541Local ID: 20a32210-bd10-11db-9be7-000ea68e967bOAI: oai:DiVA.org:ltu-4147DiVA, id: diva2:977011
Note
Validerad; 2004; 20070215 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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