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Alphabet luminescence lines in 4H-SiC
School of Physics, University of Exeter.
School of Physics, University of Exeter.
School of Physics, University of Exeter.
Department of Physics, University of Newcastle.
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2002 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 65, no 18, p. 184108-4Article in journal (Refereed) Published
Abstract [en]

First-principles density functional calculations are used to investigate antisite pairs in 4H-SiC. We show that they are likely to be formed in close proximity under ionizing conditions, and they possess a donor level and thermal stability consistent with the series of 40 photoluminescent lines called the alphabet lines. Moreover, the gap vibrational mode of the silicon antisite defect is close to a phonon replica of the b1 line and possesses a weak isotopic shift with 13C in agreement with observation.

Place, publisher, year, edition, pages
2002. Vol. 65, no 18, p. 184108-4
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-4210DOI: 10.1103/PhysRevB.65.184108ISI: 000175758700041Scopus ID: 2-s2.0-0036565413Local ID: 21f973f0-c029-11db-834c-000ea68e967bOAI: oai:DiVA.org:ltu-4210DiVA, id: diva2:977074
Note
Validerad; 2002; 20070219 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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