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Electronic structure of divacancy-hydrogen complexes in silicon
Department of Physics, University of Aveiro.
Department of Physics, University of Aveiro.
School of Physics, University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
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2003 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 15, no 39, p. S2809-S2814Article in journal (Refereed) Published
Abstract [en]

Divacancy-hydrogen complexes (V2H and V2H2) in Si are studied by ab initio modelling using large supercells. Here we pay special attention to their electronic structure, showing that these defects produce deep carrier traps. Calculated electrical gap levels indicate that V2H2 is an acceptor, whereas V2H is amphoteric, with levels close to those of the well known divacancy. Finally our results are compared with the available data from deep level transient spectroscopy and electron paramagnetic resonance experiments.

Place, publisher, year, edition, pages
2003. Vol. 15, no 39, p. S2809-S2814
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-4487DOI: 10.1088/0953-8984/15/39/005ISI: 000186283200006Scopus ID: 2-s2.0-0142060149Local ID: 26bedeb0-bdcd-11db-9be7-000ea68e967bOAI: oai:DiVA.org:ltu-4487DiVA, id: diva2:977361
Note

Validerad; 2003; 20070216 (kani)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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