Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Degradation of boron-doped Czochralski-grown silicon solar cells
School of Physics, University of Exeter, Exeter, EX4 4QL, United Kingdom.
School of Physics, University of Exeter, Exeter, EX4 4QL, United Kingdom.
School of Physics, University of Exeter, Exeter, EX4 4QL, United Kingdom.
Physics Centre, School of Natural Science, Newcastle upon Tyne, NE1 7RU, United Kingdom.
Show others and affiliations
2004 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 93, no 5, p. 055504-1Article in journal (Refereed) Published
Abstract [en]

The formation mechanism and properties of the boron-oxygen center responsible for the degradation of Czochralski-grown Si(B) solar cells during operation is investigated using density functional calculations. We find that boron traps an oxygen dimer to form a bistable defect with a donor level in the upper half of the band gap. The activation energy for its dissociation is found to be 1.2 eV. The formation of the defect from mobile oxygen dimers, which are shown to migrate by a Bourgoin mechanism under minority carrier injection, has a calculated activation energy of 0.3 eV. These energies and the dependence of the generation rate of the recombination center on boron concentration are in good agreement with observations.

Place, publisher, year, edition, pages
2004. Vol. 93, no 5, p. 055504-1
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-4600DOI: 10.1103/PhysRevLett.93.055504ISI: 000222996800032Scopus ID: 2-s2.0-69349106228Local ID: 291402f0-c357-11db-9ea3-000ea68e967bOAI: oai:DiVA.org:ltu-4600DiVA, id: diva2:977474
Note

Validerad; 2004; 20070215 (kani);

For erratum, see: Adey, J., Jones, R., Palmer, D. W., Briddon, P. R., & Öberg, S. (2004). Erratum: Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells [Phys. Rev. Lett., 93, 055504 (2004)]. Physical Review Letters, 93(16), 169904. https://doi.org/10.1103/PhysRevLett.93.169904

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2023-10-24Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Authority records

Öberg, Sven

Search in DiVA

By author/editor
Öberg, Sven
By organisation
Mathematical Science
In the same journal
Physical Review Letters
Computational Mathematics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 428 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf