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Electrical activity of multivacancy defects in silicon
Department of Physics, I3N, University of Aveiro, Campus Santiago.
Department of Physics, I3N, University of Aveiro, Campus Santiago.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.
School of Electrical, Electronic and Computer Engineering, University of Newcastle upon Tyne.
2012 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 9, no 10-11, p. 2000-2004Article in journal (Refereed) Published
Abstract [en]

The formation processes and properties of multivacancy defects in Si have been recently the subject of several re-search studies. Here we report on density functional calculations concerning the stability and electrical activity of the tetravacancy, pentavacancy and hexavacancy complexes in Si. Formation energy calculations indicate that Four-Fold Coordinated (FFC) V4 and V5 are more stable than Part-of-Hexagonal-Ring (PHR) or planar structures by at least 1.2 eV and 0.6 eV, respectively. This relative stability order between configurations remains unchanged for different charged states from double plus to double minus. Calculations of the electrical activity predict deep acceptor levels for the FFC defects. Accordingly, electron traps related to (–/0) and (=/–) levels near Ec – 0.5 eV were found for V4 and V5, whereas levels for V6 were estimated at Ec – 0.35 eV. No donor levels were found for these defects

Place, publisher, year, edition, pages
2012. Vol. 9, no 10-11, p. 2000-2004
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-5420DOI: 10.1002/pssc.201200063ISI: 000314688000029Scopus ID: 2-s2.0-84867920266Local ID: 384d20b0-db2e-48a7-a54b-86cbd9d3272aOAI: oai:DiVA.org:ltu-5420DiVA, id: diva2:978294
Note
Validerad; 2012; 20120828 (andbra)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Rayson, Mark

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