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Shallow electron states of bounded intrinsic stacking faults in silicon
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Material Science.ORCID iD: 0000-0002-1655-6658
1997 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 55, no 23, p. 15601-7Article in journal (Refereed) Published
Abstract [en]

The electronic structure of bounded intrinsic stacking faults in silicon is studied. Especially the influence of the stacking fault width on the electronic states in the band gap is investigated. The extended defect studied comprises an intrinsic stacking fault with two reconstructed 90° partials as boundaries. The atomic structure is determined by different valence force fields. These are the Keating potential, the bond-charge model, and an anharmonic version of the bond-charge model. The electronic structure is calculated by linear combinations of atomic orbitals. Ten Gaussian-type atomic orbitals of s, p, and d-type are used, and up to fourth nearest neighbor interactions are taken into account. The levels in the band gap are evaluated by the recursion method for nonorthogonal basis functions, and by a continued fraction representation of the local density of states

Place, publisher, year, edition, pages
1997. Vol. 55, no 23, p. 15601-7
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Fysik
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URN: urn:nbn:se:ltu:diva-5453DOI: 10.1103/PhysRevB.55.15601ISI: A1997XH33500052Local ID: 38f2eed0-bb59-11db-b560-000ea68e967bOAI: oai:DiVA.org:ltu-5453DiVA, id: diva2:978327
Note
Godkänd; 1997; 20070131 (cira)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Lehto, Niklas

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