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Semiconducting tin oxide nanowires and thin films for Chemical Warfare Agents detection
INFM-CNR Sensor Lab.
INFM-CNR Sensor Lab.
INFM-CNR Sensor Lab.
INFM-CNR Sensor Lab.
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2009 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 517, no 22, p. 6156-6160Article in journal (Refereed) Published
Abstract [en]

In this work we report the preparation and structural characterization of tin oxide nanowires as functional materials for the development of chemical sensors. Aspects of material preparation relevant for gas sensing applications, such as the control of the wire diameter, are emphasized. The functional characterization is focused on the detection of Chemical Warfare Agents (CWAs) simulants, with particular regard to poisoning effects induced by dimethyl methyl phosphonate (DMMP), a simulant for Sarin nerve agent. Tin oxide thin films, prepared by means of rheotaxial growth and thermal oxidation (RGTO) technique, are used as reference to better compare the performance of nanowires with thin films traditionally used in gas sensing field. © 2009 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2009. Vol. 517, no 22, p. 6156-6160
Keywords [en]
DMMP, Nanowires, Thin films, Tin oxide
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Other Physics Topics
Research subject
Experimental Physics
Identifiers
URN: urn:nbn:se:ltu:diva-5457DOI: 10.1016/j.tsf.2009.04.004ISI: 000269183500003Scopus ID: 2-s2.0-67650370055Local ID: 38fdd6a2-4048-4448-a028-261f50af6af6OAI: oai:DiVA.org:ltu-5457DiVA, id: diva2:978331
Note

Upprättat; 2009; 20141211 (albvom)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2023-05-08Bibliographically approved

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Vomiero, Alberto

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