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Dislocation related photoluminescence in silicon
School of Physics, University of Exeter.
School of Physics, University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
Department of Physics, University of Newcastle.
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2001 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 87, no 18, p. 187404-Article in journal (Refereed) Published
Abstract [en]

Dislocation related photoluminescence in Si and SiGe is attributed to stable interstitial clusters bound to 60° dislocations. Density functional based total energy calculations in Si give binding energies between 1.5 and 3.6 eV for I3 and I4 clusters with 90° and 30° partials. They possess donor levels around Ev+0.4 eV which are consistent with deep level transient spectroscopic studies on p-Si. It is further suggested that the clusters would act as the obstacles to the movement of dislocations which may have been observed in recent transmission electron microscopy studies.

Place, publisher, year, edition, pages
2001. Vol. 87, no 18, p. 187404-
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-5769DOI: 10.1103/PhysRevLett.87.187404Local ID: 3f323e30-c357-11db-9ea3-000ea68e967bOAI: oai:DiVA.org:ltu-5769DiVA: diva2:978644
Note
Validerad; 2001; 20070221 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2017-11-24Bibliographically approved

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