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The divacancy in silicon and diamond
School of Physics, University of Exeter.
School of Physics, University of Exeter.
School of Physics, University of Exeter.
School of Physics, University of Exeter.
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1999 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 273-274, p. 520-523Article in journal (Refereed) Published
Abstract [en]

First-principles studies of the divacancy (V2) in both silicon and diamond are reported. We demonstrate that the contrasting experimental spin-density localisation of both systems can be explained through the one-electron pictures arising from opposing distortions

Place, publisher, year, edition, pages
1999. Vol. 273-274, p. 520-523
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-5781DOI: 10.1016/S0921-4526(99)00543-8ISI: 000084452200122Scopus ID: 2-s2.0-0033341190Local ID: 3f7053d0-34b3-11de-98cd-000ea68e967bOAI: oai:DiVA.org:ltu-5781DiVA, id: diva2:978656
Note

Godkänd; 1999; 20090429 (andbra)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2022-07-04Bibliographically approved

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Öberg, Sven

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