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Vacancy concentration in the core of the 90° reconstructed partial dislocation in silicon
1989 (English)In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 72, no 6, p. 609-612Article in journal (Refereed) Published
Abstract [en]

The modified Tersoff potential is used to calculate the ratio C/C0 between the probability of vacancy formation at a particular site in the dislocation core and the corresponding quantity in ideal material. This ratio is given by the expression C/C0 = exp (ΔSf/k) exp (-ΔUf/kT) in which ΔSf and ΔUf stand for the differences in formation entropy and energy, respectively. The results show that C/C0 is significantly larger than one only for sites nearest to the dislocation line. It is also shown that the entropy factor is of minor importance.

Place, publisher, year, edition, pages
1989. Vol. 72, no 6, p. 609-612
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Other Physics Topics
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Fysik
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URN: urn:nbn:se:ltu:diva-5923DOI: 10.1016/0038-1098(89)91043-0ISI: A1989AZ31600020Scopus ID: 2-s2.0-0024768633Local ID: 41c41600-f1a1-11db-bb1b-000ea68e967bOAI: oai:DiVA.org:ltu-5923DiVA, id: diva2:978799
Note
Godkänd; 1989; 20070423 (ysko)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Marklund, Sune

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