Comparative characteristics of Na0.5K0.5NbO 3 films on Pt by pulsed laser deposition and magnetron sputteringShow others and affiliations
2003 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, E-ISSN 1607-8489, Vol. 55, p. 769-779Article in journal (Refereed) Published
Abstract [en]
Ferroelectric Na0.5K0.5NbO3 (NKN) thin films were grown on the Pt80Ir20 polycrystalline substrates by pulsed laser deposition (PLD) and radio frequency-magnetron sputtering (RF) technique using the same stoichiometric Na0.5K 0.5NbO3 ceramic target. X-ray diffraction proved both PLD- and RF-made Na0.5K0.5NbOj/Pt80Ir20 films are single phase and have preferential c-axis orientation. Temperature dependence of dielectric permittivity reveals the presence of two phase transitions around 210 and 410°C. Capacitance vs. applied voltage C-V @ 100 kHz, I-V, and P-E hysteresis characteristics recorded for the vertical capacitive structures yielded loss tan δ = 0.026 and 0.016, tunability about 44.5 and 30% @ 100 kV/cm, Ohmic resistivity 6.7 × 1012 Ω·cm and 0.2 × 1012 Ω·cm, remnant polarization 11.7 and 9.7 μC/cm2, coercive field 28.0 and 94.6 kV/cm for PLD- and RF-films, respectively. Piezoelectric test carried out in hydrostatic conditions showed piezoelectric coefficient dH = 21 for PLD-NKN and 15 pC/N for RF-NKN film.
Place, publisher, year, edition, pages
2003. Vol. 55, p. 769-779
Keywords [en]
K-factor, Leakage current, Na0.5K0.5NbO3 (NKN) films, Piezoelectric coefficient dH, Pulsed laser deposition (PLD), RF-magnetron sputtering, Tunability
National Category
Other Materials Engineering
Research subject
Engineering Materials
Identifiers
URN: urn:nbn:se:ltu:diva-6188DOI: 10.1080/714040729ISI: 000187625800003Scopus ID: 2-s2.0-18644369853Local ID: 462d2e90-fc46-11de-bae5-000ea68e967bOAI: oai:DiVA.org:ltu-6188DiVA, id: diva2:979065
Note
Validerad; 2003; 20100108 (andbra)
2016-09-292016-09-292023-11-09Bibliographically approved