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Oxide and interface characteristics of oxidized silicon oxynitride ceramics: an investigation by electron microscopy
Stevens Institute of Technology, Hoboken, NJ.
Stevens Institute of Technology, Hoboken, NJ.
Luleå tekniska universitet.
1998 (English)In: Journal of Materials Science, ISSN 0022-2461, E-ISSN 1573-4803, Vol. 33, no 17, p. 4447-4453Article in journal (Refereed) Published
Abstract [en]

Hot-isostatically pressed silicon oxynitride (Si2N2O) ceramics free from sintering aids were oxidized in 1 atm dry oxygen at 1100 and 1300°C. The structural and chemical characteristics of the oxide and the nature of the oxide-Si2N2O interface were determined using cross-sectional transmission electron microscopy in conjunction with small-probe energy dispersive X-ray analysis and selected-area electron diffraction. Oxidation of Si2N2O resulted in the formation of amorphous SiO2. The oxide-Si2N2O interface was chemically abrupt. The interface was very flat when parallel to low-index, high atomic density Si2N2O crystal planes but became notably undulated if oriented to high index, low atomic density planes. About 6 vol% residual SiO2 phase was present in the bulk of the Si2N2O ceramics. Current results have provided an important baseline for the understanding of the oxidation behaviour of Si2N2O.

Place, publisher, year, edition, pages
1998. Vol. 33, no 17, p. 4447-4453
National Category
Other Materials Engineering
Research subject
Material Mechanics
Identifiers
URN: urn:nbn:se:ltu:diva-6222DOI: 10.1023/A:1026449331258ISI: 000079546200020Local ID: 46cae560-179d-11de-b1a6-000ea68e967bOAI: oai:DiVA.org:ltu-6222DiVA, id: diva2:979099
Note
Godkänd; 1998; 20090323 (andbra)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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