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Structural properties of reactively sputtered W-Si-N thin films
INFN Laboratori Nazionali di Legnaro.ORCID iD: 0000-0003-2935-1165
INFN Laboratori Nazionali di Legnaro.
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2007 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 102, no 3, article id 33505Article in journal (Refereed) Published
Abstract [en]

Tungsten-silicon-nitrogen, W-Si-N, ternary thin films have been reactively sputter deposited from W5 Si3 and W Si2 targets using several nitrogen partial pressures. The films have been thermal annealed in the 600-1000 °C temperature range and a wide region of the W-Si-N ternary phase diagram has been explored by changing the N2 Ar ratio during the deposition. Multitechnique approach was adopted for the analysis of the samples. Composition has been determined via ion beam analysis; chemical states were investigated using x-ray photoelectron spectroscopy (XPS); crystalline structure was studied using transmission electron microscopy (TEM) and x-ray diffraction (XRD) and surface morphology by scanning electron microscope. The films deposited in pure argon atmosphere are tungsten rich and approach the target contents as N2 Ar ratio is varied during deposition. Tungsten enrichment in the films is caused by resputtering of silicon which can be inhibited by the formation of silicon nitride, allowing films with SiW ratio closer to the target compositions. The higher capability to form nitrides with silicon than with tungsten favors enhancement of nitrogen content in samples deposited from the silicon rich target (W Si2). The samples with excess nitrogen content have shown losses of this element after thermal treatment. XPS measurements show a break of W-N bonds caused by thermal instability of tungsten nitrides. TEM and XRD revealed the segregation of tungsten in form of metallic or silicide nanoclusters in samples with low nitrogen content (W58 Si21 N21 and W24 Si42 N34). High amounts of nitrogen were revealed to be highly effective in inhibiting metallic cluster coalescence. Measurements of electrical resistivity of as deposited films were performed using four point probe technique. They were found to lie in the range between 0.4 and 79 m cm depending on sample composition. © 2007 American Institute of Physics.

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2007. Vol. 102, no 3, article id 33505
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Experimental physics
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URN: urn:nbn:se:ltu:diva-6374DOI: 10.1063/1.2761828Scopus ID: 34548030236Local ID: 49b38b88-e38c-4786-bf5d-bc803c9cfe7aOAI: oai:DiVA.org:ltu-6374DiVA: diva2:979251
Note
Upprättat; 2007; 20141211 (albvom)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2017-11-24Bibliographically approved

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