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Isotopic effects on vibrational modes of thermal double donors in Si and Ge
Institute of Solid State and Semiconductor Physics, Minsk.
Department of Physics, Lund University.
Centre for Electronic Materials, University of Manchester.
Defence Research Establishment, Linköping.
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2001 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 308, p. 290-293Article in journal (Refereed) Published
Abstract [en]

The local vibrational modes of thermal double donors in Si and Ge are investigated by FTIR and ab initio modelling. At most, two oxygen modes are detected from each donor, which exhibit regular shifts with increasing donor number. By using mixtures of 16O and 18O, it is found that in Si the upper band does not yield any new modes suggesting that any oxygen atom is decoupled from any other. However, the lower frequency bands exhibit unique mixed modes proving for the first time that oxygen atoms are coupled together and in close spatial proximity. Ab initio calculations demonstrate that the modes and their isotopic shifts are consistent with a model involving two parallel chains of oxygen atoms linking second neighbour Si atoms, terminated by O-atoms close to the normal position for interstitial O.

Place, publisher, year, edition, pages
2001. Vol. 308, p. 290-293
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-6444DOI: 10.1016/S0921-4526(01)00700-1ISI: 000173660100072Scopus ID: 2-s2.0-0035671626Local ID: 4aac78b0-c0f1-11db-834c-000ea68e967bOAI: oai:DiVA.org:ltu-6444DiVA, id: diva2:979329
Note

Validerad; 2001; 20070220 (kani)

Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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