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Structure and morphology of surface of silicon crystals to be applied for channeling at relativistic energies
INFN Laboratori Nazionali di Legnaro.ORCID iD: 0000-0003-2935-1165
INFN Laboratori Nazionali di Legnaro.
INFN Laboratori Nazionali di Legnaro.
INFN Laboratori Nazionali di Legnaro.
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2006 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 249, no 1-2 SPEC. ISS., p. 903-906Article in journal (Refereed) Published
Abstract [en]

Bent crystals can be successfully applied for extraction/collimation of relativistic particles. A crucial feature to obtain high extraction efficiencies is the treatment of the surfaces being encountered by the beam, since mechanical operations induce considerable lattice imperfections. In order to remove the superficial damaged layer a planar etching can be applied on the surface exposed to the beam. This work presents a systematic study of the morphology and the crystalline perfection of the surface of the samples that have been used in accelerators with high efficiency. Crystals with different surface treatments have been investigated. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were applied on the characterisation of surface morphology. Low energy backscattering channeling of 2-MeV α particles or protons was used as a probe for the crystalline structure. The presence of a superficial damaged layer in the samples just after mechanical treatment was unveiled, while, in contrast, chemical etching leaves a surface with high crystalline perfection that can be related to the record efficiency. © 2006 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
2006. Vol. 249, no 1-2 SPEC. ISS., p. 903-906
Keywords [en]
Channeling, Surface treatments
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Other Physics Topics
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Experimental physics
Identifiers
URN: urn:nbn:se:ltu:diva-6467DOI: 10.1016/j.nimb.2006.03.160Scopus ID: 33745839698Local ID: 4b181a83-e649-4642-8321-26bd812350feOAI: oai:DiVA.org:ltu-6467DiVA, id: diva2:979352
Note
Upprättat; 2006; 20141216 (albvom)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2017-11-24Bibliographically approved

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Vomiero, Alberto

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