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RHEED studies during growth of TiN/SiNx/TiN trilayers on MgO(001)
Thin Film Physics Division, IFM, Linköping University.
Thin Film Physics Division, IFM, Linköping University.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Material Science.ORCID iD: 0000-0002-2286-5588
2007 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 601, no 11, p. 2352-2356Article in journal (Refereed) Published
Abstract [en]

TiN/SiNx/TiN(0 0 1) trilayers have been deposited on MgO(0 0 1) substrates using ultra-high vacuum based reactive magnetron sputtering and studied by in situ reflection high energy electron diffraction (RHEED). Depositions were carried out at 500 °C and 800 °C, with SiNx layer thicknesses between 3 and 300 Å. Here, we find that SiNx(0 0 1) layers grown at 800 °C exhibit 1 × 4 surface reconstructions along orthogonal (1 1 0) directions up to a critical thickness of ≈9 Å, where an amorphous phase forms. Growth of TiN overlayers on the reconstructed SiNx(0 0 1) layers yield RHEED patterns indicating the growth of (0 0 1)-oriented epitaxial layers with a 1 × 1 reconstruction. For the case of amorphous SiNx layers the TiN overlayers grow polycrystalline.

Place, publisher, year, edition, pages
2007. Vol. 601, no 11, p. 2352-2356
National Category
Other Materials Engineering
Research subject
Engineering Materials
Identifiers
URN: urn:nbn:se:ltu:diva-7126DOI: 10.1016/j.susc.2007.04.001ISI: 000247408600010Scopus ID: 2-s2.0-34249294534Local ID: 571b8990-5ac2-11dc-8a1d-000ea68e967bOAI: oai:DiVA.org:ltu-7126DiVA, id: diva2:980014
Note
Validerad; 2007; 20070904 (pafi)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Söderberg, HansOdén, Magnus

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