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Electronic properties of vacancy-oxygen complexes in SiGe alloys
Centre for Electronic Materials, University of Manchester.
Centre for Electronic Materials, University of Manchester.
Institute of Solid State and Semiconductor Physics, Minsk.
Department of Physics, University of Aveiro.
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2003 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 340, p. 790-4Article in journal (Refereed) Published
Abstract [en]

Capacitance transient techniques, combined with ab initio modeling, were employed to study the electronic properties and structure of vacancy-oxygen (VO) complexes in unstrained Czochralski-grown Si1-xGex crystals (0

Place, publisher, year, edition, pages
2003. Vol. 340, p. 790-4
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Computational Mathematics
Research subject
Scientific Computing
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URN: urn:nbn:se:ltu:diva-7252DOI: 10.1016/j.physb.2003.09.214ISI: 000188300200165Scopus ID: 2-s2.0-0347946868Local ID: 5987d610-bdbb-11db-9be7-000ea68e967bOAI: oai:DiVA.org:ltu-7252DiVA, id: diva2:980141
Note
Validerad; 2003; 20070216 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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