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Early stage donor-vacancy clusters in germanium
University of Aveiro.
University of Aveiro.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
University of Exeter.
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2007 (English)In: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 18, no 7, p. 769-773Article in journal (Refereed) Published
Abstract [en]

There is considerable experimental evidence that vacancies in Ge dominate several solid state reactions that range from self-diffusivity to metal and dopant transport. It is therefore vital that we fully understand how vacancies interact with other point defects in Ge. Here we have a look at the properties of small donor-vacancy (Sb n V m with m,n ≤ 2) complexes in Ge by ab-initio density functional modeling. Particular attention has been payed to binding energies and to the electronic activity of the complexes. We found that all aggregates may contribute to the n→ p type conversion that is typically observed under prolonged MeV irradiation conditions. In general, Sb n V m defects are double acceptors. It is also suggested that spontaneous formation of Sb3V complexes may limit the activation level of donors introduced by ion implantation.

Place, publisher, year, edition, pages
2007. Vol. 18, no 7, p. 769-773
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-7296DOI: 10.1007/s10854-006-9069-4Local ID: 5a490d00-6cf0-11dc-89fb-000ea68e967bOAI: oai:DiVA.org:ltu-7296DiVA: diva2:980185
Note
Validerad; 2007; 20070927 (bajo)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2017-11-24Bibliographically approved

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