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Tin-vacancy complex in germanium
Photon Science Institute, University of Manchester.
Photon Science Institute, University of Manchester.
Photon Science Institute, University of Manchester.
Belarusian State University, Minsk.
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2011 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 109, p. 083705-1Article in journal (Refereed) Published
Abstract [en]

Electrically active defects introduced into Ge crystals co-doped with tin and phosphorus atoms by irradiation with 6 MeV electrons have been studied by means of transient capacitance techniques and ab-initio density functional modeling. It is shown that Sn atoms are effective traps for vacancies (V) in the irradiated Ge:Sn+P crystals. The electronic structure of Sn-V is unraveled on the basis of hybrid states from a Sn atom and a divacancy. Unlike the case for Si, Sn-V in Ge is not a donor. A hole trap with 0.19 eV activation energy for hole emission to the valence band is assigned to an acceptor level of the Sn-V complex. The Sn-V complex anneals out upon heat-treatments in the temperature range 50–100 °C. Its disappearance is accompanied by the formation of phosphorus-vacancy centers.

Place, publisher, year, edition, pages
2011. Vol. 109, p. 083705-1
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-7313DOI: 10.1063/1.3574405ISI: 000290047000075Scopus ID: 2-s2.0-79955740450Local ID: 5a9bc3e1-d73d-4731-be84-74eeb030cfb9OAI: oai:DiVA.org:ltu-7313DiVA, id: diva2:980202
Note
Validerad; 2011; 20110420 (rayson)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Rayson, Mark

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