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Combined infrared absorption and modeling study of a dicarbon-dihydrogen defect in silicon
University of Aarhus.
University of Aarhus.
University of Aarhus.
University of Exeter.
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2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 62, no 19, p. 12859-12867Article in journal (Refereed) Published
Abstract [en]

Crystalline silicon samples doped with carbon were irradiated with electrons and subsequently implanted with protons. Infrared-absorption measurements revealed local modes of hydrogen and carbon at 2967.4, 911.7, and 654.7 cm-1, which originate from the same defect. Measurements on samples codoped with different carbon and hydrogen isotopes showed that the defect contains two equivalent carbon and two equivalent hydrogen atoms. From uniaxial stress measurements, the defect is found to display trigonal symmetry. Ab initio local-density-functional theory was applied to calculate the structure and local vibrational modes of defects with pairs of equivalent carbon and hydrogen atoms. Based on these results, the observed local modes are ascribed to a defect with two adjacent substitutional carbon atoms, each of which binds a hydrogen atom located between the carbon atoms.

Place, publisher, year, edition, pages
2000. Vol. 62, no 19, p. 12859-12867
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-7315DOI: 10.1103/PhysRevB.62.12859ISI: 000165369700053Scopus ID: 2-s2.0-0034668620Local ID: 5a9e7cd0-12f0-11dd-ada4-000ea68e967bOAI: oai:DiVA.org:ltu-7315DiVA, id: diva2:980204
Note
Validerad; 2000; 20080425 (ysko)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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