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Calculation of deep carrier traps in a divacancy in germanium crystals
Department of Physics, University of Aveiro, Campus Santiago.
Department of Physics, University of Aveiro, Campus Santiago.
School of Physics, University of Exeter.
School of Physics, University of Exeter.
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 9, p. 91919-Article in journal (Refereed) Published
Abstract [en]

We present an ab initio density functional study on the electronic structure and electrical properties of divacancies in Ge. Although suffering essentially different Jahn-Teller distortions when compared to the analogous defect in Si, the relative location of the electrical levels in the gap does not differ radically in both materials. We propose a V2 model that is responsible for a donor level at Ev+0.03 eV, a first acceptor state at Ev+0.3 eV, and a second acceptor level at Ec-0.4 eV. The latter is only 0.1 eV deeper than an electron trap that has been recently linked to a divacancy in proton implanted material.

Place, publisher, year, edition, pages
2006. Vol. 88, no 9, p. 91919-
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-7829DOI: 10.1063/1.2181202ISI: 000235736300043Scopus ID: 2-s2.0-33644675163Local ID: 64060c30-bc38-11db-a46c-000ea68e967bOAI: oai:DiVA.org:ltu-7829DiVA, id: diva2:980719
Note
Validerad; 2006; 20070214 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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