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The nitrogen-pair oxygen defect in silicon
Van der Waals-Zeeman Institute, University of Amsterdam.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
Department of Physics, University of Exeter.
Department of Physics, University of Exeter.
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1996 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 36, no 1-3, p. 91-95Article in journal (Refereed) Published
Abstract [en]

The nitrogen-pair oxygen defect in silicon has been studied by infrared absorption spectroscopy on samples implanted with various combinations of 14N, 15N, 16O and 17O. The measurements give direct evidence for the involvement of nitrogen and oxygen in the defect and show that the impurity atoms comprising the defect are only weakly coupled. Ab initio cluster calculation on several models of the nitrogen-pair oxygen defect have been performed and are compared with experiment. Based on these investigations a model consisting of a bridging oxygen atom adjacent to the nitrogen pair is suggested

Place, publisher, year, edition, pages
1996. Vol. 36, no 1-3, p. 91-95
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-7895DOI: 10.1016/0921-5107(95)01250-8ISI: A1996TX24200019Local ID: 652015e0-ed49-11dd-8bf2-000ea68e967bOAI: oai:DiVA.org:ltu-7895DiVA, id: diva2:980785
Note
Godkänd; 1996; 20090128 (andbra)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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