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Interstitial aggregates and a new model for the I1/W optical centre in silicon
School of Physics, University of Exeter.
School of Physics, University of Exeter.
School of Physics, University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
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1999 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 273-274, p. 505-508Article in journal (Refereed) Published
Abstract [en]

The properties of di-interstitial (I2), tri-interstitial (I3) and tetra-interstitial (I4) structures in silicon were studied by employing first principles local-density-functional (LDF) theory. A tri-interstitial defect can account for many of the fundamental properties of the I1/W-optical center which is observed in irradiated, annealed silicon. Energy comparisons between di-interstitial defects reveal four low-energy structures within 0.5 eV of each other.

Place, publisher, year, edition, pages
1999. Vol. 273-274, p. 505-508
National Category
Computational Mathematics
Research subject
Scientific Computing
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URN: urn:nbn:se:ltu:diva-8246DOI: 10.1016/S0921-4526(99)00538-4ISI: 000084452200118Scopus ID: 2-s2.0-0033356099Local ID: 6b9bea90-2a64-11de-adf6-000ea68e967bOAI: oai:DiVA.org:ltu-8246DiVA, id: diva2:981137
Note
Godkänd; 1999; 20090416 (andbra)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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