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Effective mass of electrons in quantum-well-like stacking-fault gap states in silicon carbide
Department of Physics & Measurement Technology, Linköping University.
Department of Physics Technology, Linköping University.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
Department of Physics, University of Newcastle.
2003 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 433-436, p. 519-522Article in journal (Refereed) Published
Abstract [en]

A first-principles calculation of the effective mass of electrons in quantum-well-like gap states induced by stacking faults and cubic inclusions in 4H- and 6H-SiC is performed, based on the density functional theory in the local density approximation. Our calculated effective electron masses for perfect crystals are in very good agreement with those previously determined both theoretically and experimentally. It has been found that electrons confined in the thin 3C-like regions have clearly heavier effective masses than that in perfect 3C-SiC.

Place, publisher, year, edition, pages
2003. Vol. 433-436, p. 519-522
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-8431Local ID: 6f162b20-c352-11db-9ea3-000ea68e967bOAI: oai:DiVA.org:ltu-8431DiVA, id: diva2:981369
Note
Validerad; 2003; 20070223 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2017-11-24Bibliographically approved

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http://www.scientific.net/0-87849-920-2/519/

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Öberg, Sven

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