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Stacking faults in silicon carbide
Department of Physics and Measurement Technology, Linköping University.
Department of Physics and Measurement Technology, Linköping University.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
Department of Physics, University of Newcastle.
2003 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 340, p. 165-70Article in journal (Refereed) Published
Abstract [en]

We review of our theoretical work on various stacking faults in SiC polytypes. Since the discovery of the electronic degradation phenomenon in 4H-SiC p-i-n diodes, stacking faults in SiC have become a subject of intensive study around the globe. At the beginning of our research project, the aim was to find the culprit for the degradation phenomenon, but in the course of this work we uncovered a wealth of information for the general properties of stacking faults in SiC. An intuitive perspective to the diverse nature of stacking faults in SiC will be given in this conference report.

Place, publisher, year, edition, pages
2003. Vol. 340, p. 165-70
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-8520DOI: 10.1016/j.physb.2003.09.045ISI: 000188300200028Scopus ID: 2-s2.0-0347764791Local ID: 7083de40-bda7-11db-9be7-000ea68e967bOAI: oai:DiVA.org:ltu-8520DiVA, id: diva2:981458
Note
Validerad; 2003; 20070216 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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