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Radiation-induced defect reactions in tin-doped Ge crystals
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2011 (English)In: Solid State Phenomena, ISSN 1012-0394, E-ISSN 1662-9779, Vol. 178 - 179, p. 392-397Article in journal (Refereed) Published
Abstract [en]

We have recently shown that Sn impurity atoms are effective traps for vacancies (V) in Ge:Sn crystals irradiated with MeV electrons at room temperature [V.P. Markevich et al., J. Appl. Phys. 109 (2011) 083705]. A hole trap with 0.19 eV activation energy for hole emission to the valence band (Eh) has been assigned to an acceptor level of the Sn-V complex. In the present work electrically active defects introduced into Ge:Sn+P crystals by irradiation with 6 MeV electrons and subsequent isochronal annealing in the temperature range 50-300 oC have been studied by means of transient capacitance techniques and ab-initio density functional modeling. It is found that the Sn-V complex anneals out upon heat-treatments in the temperature range 50-100 oC. Its disappearance is accompanied by the formation of vacancy-phosphorus (VP) centers. The disappearance of the VP defect upon thermal annealing in irradiated Sn-doped Ge crystals is accompanied by the effective formation of a defect which gives rise to a hole trap with Eh = 0.21 eV and is more thermally stable than other secondary radiation-induced defects in Ge:P samples. This defect is identified as tin-vacancy-phosphorus (SnVP) complex. It is suggested that the effective interaction of the VP centers with tin atoms and high thermal stability of the SnVP complex can result in suppression of transient enhanced diffusion of phosphorus atoms in Ge.

Place, publisher, year, edition, pages
2011. Vol. 178 - 179, p. 392-397
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-8726DOI: 10.4028/www.scientific.net/SSP.178-179.392ISI: 000303356300061Scopus ID: 2-s2.0-80053289696Local ID: 742cc33a-5684-4a28-a888-a9659a726bb6OAI: oai:DiVA.org:ltu-8726DiVA, id: diva2:981664
Note
Validerad; 2011; 20110909 (rayson)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Rayson, Mark

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