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Hydrogen-related photoluminescent centers in SiC
School of Physics, University of Exeter.
School of Physics, University of Exeter.
School of Physics, University of Exeter.
Theoretische Physik, Universität Paderborn.
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2004 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 70, no 20, p. 205207-1Article in journal (Refereed) Published
Abstract [en]

Local density functional calculations are used to investigate models of the center responsible for a prominent set of luminescent lines with zero-phonon lines around 3.15 eV in hydrogen rich 4H-SiC and previously attributed to VSi-H . We find that the electronic structure of this defect and the character of its vibrational modes are inconsistent with this assignment. In contrast, a H2* center, bound to a carbon anti-site, is more stable than the isolated molecule and possesses a donor level close to that observed for the H-lines. Moreover, its vibrational modes are in good agreement with experiment. A possible mechanism for the radiation enhanced quenching of the defect is discussed.

Place, publisher, year, edition, pages
2004. Vol. 70, no 20, p. 205207-1
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-8813DOI: 10.1103/PhysRevB.70.205207ISI: 000225478600058Scopus ID: 2-s2.0-37649026739Local ID: 75cb41f0-bd06-11db-9be7-000ea68e967bOAI: oai:DiVA.org:ltu-8813DiVA, id: diva2:981751
Note
Validerad; 2004; 20070215 (kani)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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