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Performance and spatial sensitivity variations of single photon avalanche diodes manufactured in an image sensor CMOS process
Luleå University of Technology, Department of Computer Science, Electrical and Space Engineering, Embedded Internet Systems Lab.
2015 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 36, no 11, p. 1118-1120Article in journal (Refereed) Published
Abstract [en]

In this letter we present the results from a series of single-photon avalanche diode (SPAD) structures implemented in a commercial 0.18 μm CMOS process intended for CMOS image sensors. Variations without effect on the performance and variations that produced non-functional devices are described. Devices based on the P+/NWELL and deep-NWELL/P-EPI SPADs junctions were found to work well in this process. When biased for 10% QE the best 10 μm diameter P+/NWELL SPADs exhibited a DCR of about 1 kHz, whereas the DCR of the deep-NWELL/P-EPI SPADs was only 10 Hz under the same conditions. We also show that the former type exhibited local sensitivity variations within the SPADs ranging from a factor 4 at low excess voltage to 1.2 at an excess voltage of about 0.5 V. No significant sensitivity variations were found for the deep- NWELL/P-EPI SPADs, but they were found to exhibit significant sensitivity outside the central junction, contributing from 8.3 % at low excess voltage to approximately 70% at high excess voltage

Place, publisher, year, edition, pages
2015. Vol. 36, no 11, p. 1118-1120
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Industrial Electronics
Identifiers
URN: urn:nbn:se:ltu:diva-9373DOI: 10.1109/LED.2015.2475168ISI: 000364094300003Scopus ID: 2-s2.0-84946570515Local ID: 7fb9abf9-161d-47a6-84ba-5304c91833d3OAI: oai:DiVA.org:ltu-9373DiVA, id: diva2:982311
Note
Validerad; 2015; Nivå 2; 20150901 (andbra)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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