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Molecular hydrogen traps within silicon
Department of Physics, University of Exeter.
Department of Physics, University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
Department of Physics, University of Newcastle.
1999 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 58, no 1-2, p. 24-25Article in journal (Refereed) Published
Abstract [en]

We present the results of first principle calculations on the behaviour of molecular hydrogen within crystalline silicon, both as an isolated species, and within defects in the material. These results are compared with recent experimental infra-red and Raman data obtained for silicon treated by either hydrogen plasma or soaked in hydrogen gas. The effect of Fermi-level position on the diffusion barrier of molecular hydrogen within silicon is also discussed

Place, publisher, year, edition, pages
1999. Vol. 58, no 1-2, p. 24-25
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-9915DOI: 10.1016/S0921-5107(98)00268-2ISI: 000079415800006Scopus ID: 2-s2.0-0345504128Local ID: 89ea35a0-49f0-11de-93f6-000ea68e967bOAI: oai:DiVA.org:ltu-9915DiVA, id: diva2:982854
Note
Godkänd; 1999; 20090526 (andbra)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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