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Anomaly enhancement of the dislocation velocity in SiC
University of Sussex.
University of Sussex.
University of Bologna.
University of Sussex.
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2007 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 401-402, p. 62-66Article in journal (Refereed) Published
Abstract [en]

Under forward bias SiC p-i-n diodes exhibit an anomaly enhancement of the partial dislocation mobility. Through first-principle calculations, we have shown that Peierls barriers and electrical activities are strongly dependent on the dislocation core structures. Further we have found that solitons or antiphase defects along the dislocation line cannot explain alone the enhancement of the dislocation velocity. We have proposed a new theoretical model that can explain the enhancement of the dislocation mobility under forward bias. This model can be applied to any semiconductor materials in order to predict the behaviour under electron-hole plasma injections.

Place, publisher, year, edition, pages
2007. Vol. 401-402, p. 62-66
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-9935DOI: 10.1016/j.physb.2007.08.114ISI: 000252041000015Scopus ID: 2-s2.0-36049019984Local ID: 8a4c9350-a6e8-11dc-9534-000ea68e967bOAI: oai:DiVA.org:ltu-9935DiVA, id: diva2:982874
Note
Validerad; 2007; Bibliografisk uppgift: Proceedings of the 24th International Conference on Defects in Semiconductors; 20071210 (evan)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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