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Nitrogen in germanium: identification of the pair defect
University of Aarhus.
University of Exeter.
Luleå University of Technology, Department of Engineering Sciences and Mathematics, Mathematical Science.ORCID iD: 0000-0002-0292-1159
1994 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 50, no 7, p. 4378-4384Article in journal (Refereed) Published
Abstract [en]

Several nitrogen-related centers have been introduced by ion implantation of nitrogen into germanium and studied by infrared-absorption spectroscopy. Two local vibrational modes at 825.3 and 658.6 cm-1 were especially prominent. Measurements on annealed samples implanted with either pure 14N or 15N, or implanted with both isotopes showed these modes to arise from a nitrogen pair defect analogous to one previously suggested to occur in silicon. Based on this and ab initio pseudopotential cluster theory, a model of the pair is proposed which is consistent with the observed infrared absorption. This model is similar to that of the nitrogen pair in silicon and offers an explanation of the low donor efficiency of nitrogen in germanium. Several other nitrogen-related local vibrational modes are also observed in the implanted material.

Place, publisher, year, edition, pages
1994. Vol. 50, no 7, p. 4378-4384
National Category
Computational Mathematics
Research subject
Scientific Computing
Identifiers
URN: urn:nbn:se:ltu:diva-10132DOI: 10.1103/PhysRevB.50.4378ISI: A1994PD75300013Scopus ID: 2-s2.0-4243911996Local ID: 8e02d620-1abb-11dd-8c59-000ea68e967bOAI: oai:DiVA.org:ltu-10132DiVA, id: diva2:983072
Note
Godkänd; 1994; 20080505 (ysko)Available from: 2016-09-29 Created: 2016-09-29 Last updated: 2018-07-10Bibliographically approved

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Öberg, Sven

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